Datasheet STPS2H100 (STMicroelectronics) - 4

STPS2H100 Characteristics (curves) Figure 6. Relative variation of thermal impedance junction Figure 5. Normalized avalanche power derating versus to ambient versus pulse duration (SMA) junction temperature (Tj = 125 °C)
P (t Zth(j-a)/R ARM p) th(j-a) P (10 µs) 1.0 ARM 1 SMA 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.01 0.3 0.2 t 0.1 Single pulse p(µs) tp(s) 0.001 0.0 1 10 100 1000 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Figure 7. Relative variation of thermal impedance junction Figure 8. Relative variation of thermal impedance junction to lead versus pulse duration (SMA Flat, SMA Flat Notch) to ambient versus pulse duration (SMB)
Zth(j-l)/ Rth(j-l) Zth(j-a)/Rth(j-a) 1.0 1.0 SMA Flat SMB 0.9 SMA Flat Notch 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 Single pulse 0.1 t 0.1 Single pulse p(s) tp(s) 0.0 0.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Figure 9. Relative variation of thermal impedance junction Figure 10. Reverse leakage current versus reverse to lead versus pulse duration (SMB Flat) voltage applied (typical values)
Zth(j-l) /Rth(j-l) I (µA) R 1.0 1.E+04 SMBflat 0.9 1.E+03 Tj = 150 °C 0.8 0.7 Tj = 125 °C 1.E+02 0.6 Tj = 100 °C 0.5 1.E+01 Tj = 75 °C 0.4 T 1.E+00 j = 50 °C 0.3 T 0.2 j = 25 °C 1.E-01 0.1 Single pulse tp(s) VR(V) 0.0 1.E-02 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 0 2 0 40 60 80 100
DS1452
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Rev 10 page 4/19
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 SMA Flat package information 2.2 SMA Flat Notch package information 2.3 SMA package information 2.4 SMB package information 2.5 SMB Flat package information 3 Ordering Information Revision history