Datasheet MBRS130LT3G, SBRS8130LT3G, SBRS8130LN (ON Semiconductor) - 4

MBRS130LT3G, SBRS8130LT3G, SBRS8130LN
1000 ANCE D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, TIME (s) EFFECTIVE TRANSIENT THERMAL RESIST
Figure 8. Thermal Response, Min Pad
100 ANCE D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, TIME (s) EFFECTIVE TRANSIENT THERMAL RESIST
Figure 9. Thermal Response, 1 Inch Pad
275 2.0 250 Power based on T 2.0 oz 1.8 A = 25°C 225 1.6 1.0 oz 200 1.4 175 1.2 150 ATION (W) °C/W) 1.0 125 0.8 qJA ( 100 75 1.0 oz 0.6 50 2.0 oz 0.4 POWER DISSIP 25 0.2 0 0 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 COPPER AREA (mm2) COPPER AREA (mm2)
Figure 10. Thermal Resistance vs. Copper Area Figure 11. Power Dissipation vs. Copper Area www.onsemi.com 4