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Datasheet RFD10P03L, RFD10P03LSM, RFP10P03L (Intersil)

ПроизводительIntersil
Описание10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
Страниц / Страница8 / 1 — RFD10P03L, RFD10P03LSM, RFP10P03L. Data Sheet. July 1999. File Number. …
Формат / Размер файлаPDF / 145 Кб
Язык документаанглийский

RFD10P03L, RFD10P03LSM, RFP10P03L. Data Sheet. July 1999. File Number. 3515.2. 10A, 30V, 0.200 Ohm, Logic Level,. Features

Datasheet RFD10P03L, RFD10P03LSM, RFP10P03L Intersil

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RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 File Number 3515.2 10A, 30V, 0.200 Ohm, Logic Level, Features P-Channel Power MOSFET
• 10A, 30V These products are P-Channel power MOSFETs • rDS(ON) = 0.200Ω manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, • Temperature Compensating PSPICE® Model gives optimum utilization of silicon, resulting in outstanding • PSPICE Thermal Model performance. They were designed for use in applications such as switching regulators, switching converters, motor • Peak Current vs Pulse Width Curve drivers, and relay drivers. These transistors can be operated • UIS Rating Curve directly from integrated circuits. • 175oC Operating Temperature Formerly developmental type TA49205.
Symbol Ordering Information D PART NUMBER PACKAGE BRAND
RFD10P03L TO-251AA 10P03L
G
RFD10P03LSM TO-252AA 10P03L RFP10P03L TO-220AB F10P03L
S
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A..
Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN DRAIN (FLANGE) GATE GATE SOURCE JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE)
7-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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