Datasheet RFD10P03L, RFD10P03LSM, RFP10P03L (Intersil) - 4
| Производитель | Intersil |
| Описание | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET |
| Страниц / Страница | 8 / 4 — RFD10P03L, RFD10P03LSM, RFP10P03L. Typical Performance Curves. … |
| Формат / Размер файла | PDF / 145 Кб |
| Язык документа | английский |
RFD10P03L, RFD10P03LSM, RFP10P03L. Typical Performance Curves. (Continued). -50. -25. STARTING T. PULSE DURATION = 250. J = 25
7 предложений от 7 поставщиков Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| RFP10P03L-VB
| 142 ₽ | |
| RFP10P03L
| по запросу | |
| RFP10P03L
ON Semiconductor | по запросу | |
| RFP10P03L
| по запросу | |
Модельный ряд для этого даташита
Текстовая версия документа
RFD10P03L, RFD10P03LSM, RFP10P03L Typical Performance Curves
Unless Otherwise Specified
(Continued) -50 -25 STARTING T PULSE DURATION = 250
µ
s J = 25
o
C DUTY CYCLE = 0.5% MAX TC = 25oC VGS = -5V -20 -10 VGS = -10V VGS = -4V -15 STARTING TJ = 150
o
C VGS = -3.5V -10 ALANCHE CURRENT (A) V A If R = 0 , , DRAIN CURRENT (A) VGS = -3V tAV = (L) (IAS)/(1.3 RATED BVDSS - VDD) I D I AS -5 IF R
≠
0 tAV = (L/R) ln [(IAS*R)/(1.3 RATED BVDSS - VDD) + 1] -1 0 0.01 0.1 1 10 0 -1 -2 -3 -4 -5 tAV, TIME IN AVALANCHE (ms) VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS CAPABILITY -25 400 PULSE DURATION = 250
µ
s -55oC PULSE DURATION = 80
µ
s DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX V 25oC DD = -15V T -20 C = 25oC ) 300 175oC
Ω
ID = -20A -15 SOURCE ID = -10A O ANCE (m 200 ID = -5A -10 I TE DRAIN CURRENT (A) D = -2.5A A DRAIN T ON RESIST 100 -5 , ON-ST r DS(ON), I D(ON) 0 0 0 -1.5 -3.0 -4.5 -6.0 -2 -4 -6 -8 -10 VGS, GATE TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 2.0 1.2 PULSE DURATION = 80
µ
s I DUTY CYCLE = 0.5% MAX D =- 250uA VGS = -5V, ID = -10A 1.5 1.1 SOURCE SOURCE GE A O O T L ANCE O 1.0 1.0 WN V ON RESIST 0.5 0.9 BREAKDO NORMALIZED DRAIN T NORMALIZED DRAIN T 0 0.8 -80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE ON FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN RESISTANCE vs JUNCTION TEMPERATURE VOLTAGE vs JUNCTION TEMPERATURE
7-6
