PD - 96123 IRLR8743PbF IRLU8743PbF Applications HEXFET® Power MOSFET l High Frequency Synchronous Buck V Converters for Computer Processor Power DSSRDS(on) maxQg l High Frequency Isolated DC-DC 30V3.1m : 39nC Converters with Synchronous Rectification for Telecom and Industrial Use D l Lead-Free Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRLR8743PbF IRLU8743PbF GDS Gate Drain Source Absolute Maximum RatingsParameterMax.Units VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 160f ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 113f A I Pulsed Drain Current DM c 640 PD @TC = 25°C Maximum Power Dissipation g 135 W PD @TC = 100°C Maximum Power Dissipation g 68 Linear Derating Factor 0.90 W/°C TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal ResistanceParameterTyp.Max.Units RθJC Junction-to-Case ––– 1.11 Rθ Junction-to-Ambient (PCB Mount) JA g ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Notes through are on page 11 www.irf.com 1 08/15/07
