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Datasheet MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G (ON Semiconductor) - 2

ПроизводительON Semiconductor
ОписаниеSchottky Power Rectifier, Surface Mount, 1.0 A, 20 V
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Язык документаанглийский

MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. THERMAL CHARACTERISTICS

MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G MAXIMUM RATINGS Rating Symbol Value Unit THERMAL CHARACTERISTICS

42 предложений от 19 поставщиков
Выпрямитель Шоттки, универсальный, 20 В, 1 А, Одиночный, DO-216AA, 2 вывод(-ов), 450 мВ
MBRM120LT3G
ON Semiconductor
от 36 ₽
Maybo
Весь мир
MBRM120LT3G
ON Semiconductor
41 ₽
Контест
Россия
MBRM120LT3G
ON Semiconductor
по запросу
Augswan
Весь мир
MBRM120LT3G
ON Semiconductor
по запросу
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MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G MAXIMUM RATINGS Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 20 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IO A (At Rated VR, TC = 135C) 1.0 Peak Repetitive Forward Current IFRM A (At Rated VR, Square Wave, 100 kHz, TC = 135C) 2.0 Non−Repetitive Peak Surge Current IFSM A (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) 50 Storage Temperature Tstg −55 to 150 C Operating Junction Temperature TJ −55 to 125 C Voltage Rate of Change dv/dt V/ms (Rated VR, TJ = 25C) 10,000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Anode) (Note 1) Rtjl 35 C/W Thermal Resistance, Junction−to−Tab (Cathode) (Note 1) Rtjtab 23 Thermal Resistance, Junction−to−Ambient (Note 1) Rtja 277 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10.
ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 VF
TJ = 25 C TJ = 85 C
V (IF = 0.1 A) 0.34 0.26 (IF = 1.0 A) 0.45 0.415 (IF = 3.0 A) 0.65 0.67 Maximum Instantaneous Reverse Current (Note 2), See Figure 4 IR
TJ = 25 C TJ = 85 C
mA (VR = 20 V) 0.40 25 (VR = 10 V) 0.10 18 2. Pulse Test: Pulse Width  250 ms, Duty Cycle  2%. 10 10 TJ = 125C TJ = 85C TJ = 125C ARD CURRENT (AMPS) 1.0 ARD CURRENT (AMPS) 1.0 W W TJ = 85C TJ = 25C ANEOUS FOR TJ = −40C ANEOUS FOR TJ = 25C 0.1 0.1 ANT 0.1 0.3 0.5 0.7 0.9 ANT 0.1 0.3 0.5 0.7 0.9 v V , INST F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) , INST F, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE i F I F (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2
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