Datasheet BAV74LT1G (ON Semiconductor)

link to page 1 link to page 1 BAV74LT1G Monolithic Dual Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
www.onsemi.com
ANODE 1 3
MAXIMUM RATINGS
(EACH DIODE) CATHODE 2
Rating Symbol Value Unit
ANODE Reverse Voltage VR 50 Vdc Forward Current I 3 F 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc 1
THERMAL CHARACTERISTICS
2
Characteristic Symbol Max Unit SOT−23 (TO−236) CASE 318
Total Device Dissipation FR− 5 Board PD
STYLE 9
(Note 1), TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina PD Substrate, (Note 2) TA = 25°C 300 mW Derate above 25°C 2.4 mW/°C JA M G G Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W 1 Junction and Storage Temperature TJ, Tstg −55 to +150 °C JA = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be M = Date Code* assumed, damage may occur and reliability may be affected. G = Pb−Free Package 1. FR− 5 = 1.0 0.75 0.062 in. (Note: Microdot may be in either location) 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION Device Package Shipping
† BAV74LT1G SOT−23 3000/Tape & Reel (Pb−Free) BAV74LT3G SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 6 BAV74LT1/D