Datasheet BAS116 (Nexperia) - 4

Nexperia BAS116 Low-leakage diode
mbg704 102 mlb754 102 IR IFSM (nA) (A) 10 (1) 10 1 10- 1 1 10- 2 (2) 10-1 10- 3 1 104 103 10 102 0 50 100 150 200 tp (µs) Tj (°C) Based on square wave currents. VR = 75 V Tj(init) = 25 °C (1) Maximum values
Fig. 3. Non-repetitive peak forward current as a
(2) Typical values
function of pulse duration; typical values Fig. 4. Reverse current as a function of junction temperature
mbg526 2 Cd (pF) 1 0 0 5 10 15 20 VR (V) f = 1 MHz; Tamb = 25 °C
Fig. 5. Diode capacitance as a function of reverse voltage; typical values
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Product data sheet 5 August 2020 4 / 10
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents