Datasheet BAV99 (Nexperia) - 4

Nexperia BAV99 High-speed switching diode 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Per diode
VF forward voltage IF = 1 mA; Tamb = 25 °C - - 715 mV IF = 10 mA; Tamb = 25 °C - - 855 mV IF = 50 mA; Tamb = 25 °C - - 1 V IF = 150 mA; Tamb = 25 °C - - 1.25 V IR reverse current VR = 25 V; Tamb = 25 °C - - 30 nA VR = 80 V; Tamb = 25 °C - - 0.5 µA VR = 25 V; Tj = 150 °C - - 30 µA VR = 80 V; Tj = 150 °C - - 50 µA Cd diode capacitance VR = 0 V; f = 1 MHz; Tamb = 25 °C - - 1.5 pF trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; - - 4 ns RL = 100 Ω; Tamb = 25 °C VFRM peak forward recovery IF = 10 mA; tr = 20 ns; Tamb = 25 °C - - 1.75 V voltage 006aab132 103 006aab133 102 IR I (1) F (µA) (mA) 10 102 1 (2) 10-1 10 (3) 10-2 (1) (2) (3) (4) 10-3 1 10-4 (4) 10-1 10-5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 VF (V) VR (V) (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C (4) Tamb = -40 °C (4) Tamb = -40 °C
Fig. 1. Forward current as a function of forward Fig. 2. Reverse current as a function of reverse voltage; typical values voltage; typical values
BAV99 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. Al rights reserved
Product data sheet 1 July 2022 4 / 10
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents