Si1308EDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.8 1.35 ) (A rrent u 0.9 C n rai D - I D 0.45 0 0 25 50 75 100 125 150 T - Case Temperature (°C) C Current Derating* 0.6 0.45 0.5 0.36 0.4 0.27 0.3 Power (W) Power (W) 0.18 0.2 0.09 0.1 0.0 0.00 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Ambient Temperature (°C) C A Power, Junction-to-CasePower, Junction-to-Ambient * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-1997-Rev. C, 06-Oct-14 5 Document Number: 63399 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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