Datasheet KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M (Vishay) - 2

KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M
www.vishay.com Vishay General Semiconductor
THERMAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL KBU4A KBU4B KBU4D KBU4G KBU4J KBU4K KBU4M UNIT
RθJA 19 (2) Typical thermal resistance °C/W RθJL 4.0 (1)
Notes
(1) Units mounted on a 2.0" x 1.6" x 0.3" thick (5 cm x 4 cm x 0.8 cm) aluminum plate (2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ORDERING INFORMATION
(Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
KBU4J-E4/51 8.0 51 250 Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted) 4 100 60 Hz Resistive or Inductive Load 3 rrent (A) u rrent (A) 10 u Heatsink Mounting, ard C ard C 2 T , 2.0 x 1.6 x 3.0" C rw w (5.0 x 4.0 x 0.8 cm) o T = 25 °C r J o Al. Plate Pulse Width = 300 µs s F u 1 % Duty Cycle 1 age F 1 er v T , A PCB Mounting A 0.47" x 0.47" (12 x 12 mm) Copper Pads Instantaneo 0 0.1 0 50 100 150 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve Output Rectified Current Fig. 3 - Typical Forward Characteristics Per Diode 200 50 T = 150 °C J 175 Single Sine-Wave 10 rrent (A) 150 rrent (µA) u u T = 100 °C J 125 rge C u erse C v 1 100 ard S s Re u rw o 75 0.1 eak F T = 25 °C 50 J P Instantaneo 25 0.01 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Current Per Diode Revision: 14-Apr-2020
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