MBR2090CT-M3, MBR20100CT-M3www.vishay.com Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS(TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNITTC = 25 °C 0.80 IF = 10 A Max. instantaneous forward voltage per diode VF (1) 0.65 V TC = 125 °C IF = 20 A 0.75 Max. reverse current per diode TJ = 25 °C 100 μA I (2) at working peak reverse voltage R TJ = 100 °C 6.0 mA
Notes(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS PARAMETER SYMBOL MBR2090CT, MBR20100CT UNITRJA 60 Typical thermal resistance per diode °C/W RJC 2.0
ORDERING INFORMATION(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODETO-220AB MBR20100CT-M3/4W 1.88 4W 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES(TA = 25 °C unless otherwise noted) 20 160 Resistive or Inductive Load T = T Max. J J 8.3 ms Single Half Sine-Wave 140 16 120 12 ard Current (A) 100 orw 8 ard Surge Current (A) 80 rw age F o er v 4 A 60 eak F P 0 40 0 50 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Per Diode Revision: 11-May-16
2Document Number: 89192 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000