Datasheet MBR2090CT-M3, MBR20100CT-M3 (Vishay) - 3

MBR2090CT-M3, MBR20100CT-M3
www.vishay.com Vishay General Semiconductor 100 10 000 T = 25 °C J f = 1 MHz T = 150 °C V = 50 mVp-p J sig 10 1000 T = 125 °C J ard Current (A) rw 1 o 100 0.1 T = 25 °C nction Capacitance (pF) J u J Instantaneous F 0.01 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 100 T = 150 °C J Junction to Case 10 (°C/W) T = 125 °C J 10 1 rse Current (mA) e v Impedance 0.1 mal 1 0.01 T = 25 °C ansient Ther Instantaneous Re J r T 0.001 0.1 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) 0.380 (9.65) 0.161 (4.08) 0.185 (4.70) 0.139 (3.53) 0.175 (4.44) 0.055 (1.39) 0.113 (2.87) 0.045 (1.14) 0.103 (2.62) 0.635 (16.13) 0.603 (15.32) 0.625 (15.87) 0.573 (14.55) PIN 0.350 (8.89) 1 2 3 0.330 (8.38) 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.104 (2.65) 0.028 (0.70) 0.022 (0.56) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.014 (0.36) Revision: 11-May-16
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