Datasheet MTP3N60E (ON Semiconductor) - 2
| Производитель | ON Semiconductor |
| Описание | TMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate |
| Страниц / Страница | 9 / 2 — N−Channel Enhancement−Mode Silicon. Gate. http://onsemi.com. TMOS POWER … |
| Формат / Размер файла | PDF / 292 Кб |
| Язык документа | английский |
N−Channel Enhancement−Mode Silicon. Gate. http://onsemi.com. TMOS POWER FET. 3.0 AMPERES, 600 VOLTS. RDS(on) = 2.2. TO-220AB
8 предложений от 8 поставщиков TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS |
| MTP3N60E
Motorola | 49 ₽ | |
| MTP3N60E
Motorola | по запросу | |
| MTP3N60E
| по запросу | |
| MTP3N60E
ON Semiconductor | по запросу | |
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Текстовая версия документа
MTP3N60E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate http://onsemi.com
This advanced high voltage TMOS E−FET is designed to withstand
TMOS POWER FET
high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast
3.0 AMPERES, 600 VOLTS
recovery time. Designed for high voltage, high speed switching
RDS(on) = 2.2
W applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage
TO-220AB
transients.
CASE 221A−09 Style 5
• Avalanche Energy Capability Specified at Elevated Temperature • Low Stored Gate Charge for Efficient Switching • Internal Source−to−Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode D • Source−to−Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode ® G S
Preferred
devices are Motorola recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006 − Rev. 3 MTP3N60E/D
