MTP3N60EMAXIMUM RATINGS (TC = 25°C unless otherwise noted) RatingSymbolValueUnit Drain−Source Voltage VDSS 600 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 600 Vdc Gate−Source Voltage — Continuous VGS ± 20 Vdc Gate−Source Voltage — Non−repetitive VGSM ± 40 Vpk Drain Current — Continuous ID 3.0 Adc Drain Current — Continuous @ 100°C ID 2.4 Drain Current — Pulsed IDM 14 Total Power Dissipation @ TC = 25°C PD 75 Watts Derate above 25°C 0.6 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain−to−Source Avalanche Energy — TJ = 25°C WDSR(1) 290 mJ Single Pulse Drain−to−Source Avalanche Energy — TJ = 100°C 46 Repetitive Pulse Drain−to−Source Avalanche Energy WDSR(2) 7.5 THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case° RθJC 1.67 °C/W Thermal Resistance — Junction to Ambient° RθJA 62.5 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C (1) VDD = 50 V, ID = 3.0 A (2) Pulse Width and frequency is limited by TJ(max) and thermal response Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. http://onsemi.com2
