Shenler: реле, интерфейсные модули

Datasheet ADG736 (Analog Devices) - 4

ПроизводительAnalog Devices
ОписаниеCMOS Low Voltage 2.5 Ω Dual SPDT Switch
Страниц / Страница12 / 4 — ADG736. Data Sheet. Table 2. B Version. −40°C to. Parameter. 25°C. +85°C. …
Формат / Размер файлаPDF / 249 Кб
Язык документаанглийский

ADG736. Data Sheet. Table 2. B Version. −40°C to. Parameter. 25°C. +85°C. +125°C. Unit. Test Conditions/Comments

ADG736 Data Sheet Table 2 B Version −40°C to Parameter 25°C +85°C +125°C Unit Test Conditions/Comments

68 предложений от 32 поставщиков
Микросхема Чип аналогового переключателя, ANALOG DEVICES ADG736BRMZ Analog Switch, Dual Channel, SPDT, 2Channels, 4Ω, 1.8V to 5.5V, MSOP, 10Pins
Элитан
Россия
ADG736BRMZ
Analog Devices
100 ₽
Lixinc Electronics
Весь мир
ADG736BRMZ
Rochester Electronics
108 ₽
Элрус
Россия
ADG736BRMZ-REEL
Analog Devices
89 ₽
Augswan
Весь мир
ADG736BRMZ-REEL7
Analog Devices
по запросу
Многослойные керамические конденсаторы от лидеров азиатского рынка

Модельный ряд для этого даташита

Текстовая версия документа

link to page 9 link to page 9 link to page 9 link to page 9 link to page 9 link to page 9 link to page 9 link to page 9 link to page 9 link to page 9 link to page 4
ADG736 Data Sheet
VDD = 3 V ± 10%, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.
Table 2. B Version −40°C to −40°C to Parameter 25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 5 5.5 Ω typ VS = 0 V to VDD, IDS = −10 mA; see Figure 10 8 12 Ω max See Figure 10 On Resistance Match Between Channels (∆RON) 0.1 Ω typ VS = 0 V to VDD, IDS = −10 mA 0.4 0.4 Ω max On Resistance Flatness (RFLAT (ON)) 2.5 2.5 Ω typ VS = 0 V to VDD, IDS = −10 mA LEAKAGE CURRENTS VDD = 3.3 V Source Off Leakage IS (Off) ±0.01 1 nA typ VS = 3 V/1 V, VD = 1 V/3 V; see Figure 11 Channel On Leakage ID, IS (On) ±0.01 5 nA typ VS = VD = 1 V or 3 V; see Figure 12 DIGITAL INPUTS Input High Voltage, VINH 2.0 2.4 V min Input Low Voltage, VINL 0.4 0.8 V max Input Current, IINL or IINH 0.005 µA typ VIN = VINL or VINH ±0.1 ± 0.1 µA max DYNAMIC CHARACTERISTICS1 tON 14 ns typ RL = 300 Ω, CL = 35 pF 20 20 ns max VS = 2 V; see Figure 13 tOFF 6 ns typ RL = 300 Ω, CL = 35 pF 10 10 ns max VS = 2 V; see Figure 13 Break-Before-Make Time Delay, tD 7 ns typ RL = 300 Ω, CL = 35 pF 1 1 ns min VS1 = VS2 = 2 V; see Figure 14 Off Isolation −62 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz −82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 15 Channel-to-Channel Crosstalk −62 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz −82 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 16 Bandwidth (−3 dB) 200 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 17 CS (Off) 9 pF typ CD, CS (On) 32 pF typ POWER REQUIREMENTS VDD = 3.3 V IDD 0.001 µA typ Digital inputs = 0 V or 3 V 1.0 1.0 µA max 1 Guaranteed by design; not subject to production test. Rev. D | Page 4 of 12 Document Outline Features Applications Functional Block Diagram General Description Product Highlights Revision History Specifications Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Applications Information Outline Dimensions Ordering Guide Automotive Products
ТМ Электроникс. Электронные компоненты и приборы. Скидки, кэшбэк и бесплатная доставка