Datasheet TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) (ON Semiconductor) - 4

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
4.0 VCC V I R CC = 30 V B1 = IB2 B & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V ts I T D C/IB = 250 J = 25°C 1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE I 2.0 B ≈ 100 mA RC MSD6100 USED BELOW I SCOPE B ≈ 100 mA TUT V2 RB t (s)μ f approx 1.0 +8.0 V 0.8 D 51 1 ≈ 8.0 k ≈ 60 t, TIME t 0 0.6 r V1 approx +4.0 V 0.4 -12 V 25 ms t for td and tr, D1 is disconnected d @ VBE(off) = 0 PNP and V t 2 = 0, RB and RC are varied r, tf ≤ 10 ns NPN to obtain desired test currents. DUTY CYCLE = 1.0% 0.2 For NPN test circuit, reverse diode, 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 polarities and input pulses. IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times Test Circuit Figure 4. Switching Times
1.0 0.7 ANCE D = 0.5 0.5 RESIST 0.3 0.2 0.2 0.1 0.1 THERMAL Z P q (pk) JC(t) = r(t) RqJC (NORMALIZED) 0.07 0.05 RqJC = 2.5°C/W MAX 0.05 D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN 0.03 t , TRANSIENT 1 READ TIME AT t r(t) 1 0.02 t2 0.01 TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms)
Figure 5. Thermal Response www.onsemi.com 4