Datasheet BSS123 (ON Semiconductor) - 5

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BSS123 TYPICAL CHARACTERISTICS
(continued) 1 5 100 s Single Pulse RDS(on) Limit RJA = 350°C/W 1 ms 4 TA = 25°C 0.1 10 ms 3 100 ms
ransient Power (W)
2
, Drain Current (A)
0.01
I D
V 1 s GS = 10 V Single Pulse 10 s 1 RJA = 350°C/W DC
P(pk), Peak T
TA = 25°C 0.001 0 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000
VDS, Drain−Source Voltage (V) t1, Time (s) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation
1 D = 0.5 0.2
ransient
0.1 0.1 RJA(t)= r(t) * RJA 0.05 RJA = 350°C/W 0.02 P(pk) 0.01 0.01 t1
Thermal Resistance
t2 Single Pulse TJ − TA = P * RJA(t)
r(t), Normalized Effective T
Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, Time (s) Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design.
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