Datasheet HUF75652G3 (ON Semiconductor) - 2

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HUF75652G3 ABSOLUTE MAXIMUM RATINGS
TC = 25°C unless otherwise specified
Description Symbol Ratings Units
Drain to Source Voltage (Note 1) VDSS 100 V Drain to Gate Voltage (RGS = 20 kW) (Note 1) VDGR 100 V Gate to Source Voltage VGS +20 V Drain Current − Continuous (TC = 25°C, VGS = 10 V) (Figure 2) ID 75 A − Continuous (TC = 100°C, VGS = 10 V) (Figure 2) ID 75 A − Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6 Power Dissipation PD 515 W − Derate Above 25°C 3.44 W/°C Operating and Storage Temperature TJ, TSTG −55 to 175 °C Maximum Temperature for Soldering − Leads at 0.063 in (1.6 mm) from Case for 10 s TL 300 °C − Package Body for 10 s, See Techbrief TB334 Tpkg 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. TJ = 25°C to 150°C.
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