Datasheet HUF75652G3 (ON Semiconductor) - 6
| Производитель | ON Semiconductor |
| Описание | MOSFET – Power, N-Channel, Ultrafet 100 V, 75 A, 8 mW |
| Страниц / Страница | 12 / 6 — HUF75652G3. TYPICAL PERFORMANCE CURVES. 1.2. 20000. ID = 250 mA. CISS = … |
| Формат / Размер файла | PDF / 553 Кб |
| Язык документа | английский |
HUF75652G3. TYPICAL PERFORMANCE CURVES. 1.2. 20000. ID = 250 mA. CISS = CGS + CGD. 10000. CRSS = CGD. 1.1. 1000. 1.0. COSS. CDS + CGD
35 предложений от 21 поставщиков Транзистор: N-MOSFET; полевой; 100В; 75А; 515Вт; TO247 |
| HUF75652G3
ON Semiconductor | 545 ₽ | |
| HUF75652G3
ON Semiconductor | 856 ₽ | |
| HUF75652G3
ON Semiconductor | от 947 ₽ | |
| HUF75652G3
ON Semiconductor | 1 042 ₽ | |
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HUF75652G3 TYPICAL PERFORMANCE CURVES
(continued)
1.2 20000 ID = 250 mA CISS = CGS + CGD 10000 CRSS = CGD 1.1 1000 1.0 COSS
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CDS + CGD BREAKDOWN VOLTAGE C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE VGS = 0V, f = 1MHz 0.9 100 −80 −40 0 40 80 120 160 200 0.1 1.0 10 100 TJ, JUNCTION TEMPERATURE (
5
C) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. NORMALIZED DRAIN TO SOURCE Figure 12. CAPACITANCE vs DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION VOLTAGE TEMPERATURE 10 VDD = 50V 8 6 4 WAVEFORMS IN 2 DESCENDING ORDER: , GATE TO SOURCE VOLTAGE (V) ID = 75A I V GS D = 35A 0 0 50 100 150 200 250 Qg, GATE CHARGE (nC) Figure 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT www.onsemi.com 6
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