IRF120-123/IRF520-523 MTP10N08/10N10 Maximum Ratings Rating IRF120/122 IRF520/522 MTP10N10 Rating MTP10N08 VDSS Drain to Source Voltage1 VDGR Drain to Gate Voltage1 RQS = 20 kft VGS Gate to Source Voltage ±20 ±20 ±20 V Operating Junction and Storage Temperatures -55 to +150 -55 to +150 -55 to +150 °c 275 275 275 °c Characteristic Symbol Tj, T8|g TL Maximum Lead Temperature for Soldering Purposes, 1/8" From Case for 5 s Rating IRF122/123 IRF522/523 Unit 100 80 60 V 100 80 60 V Maximum Thermal Characteristics IRF120-123/IRF520-523 MTP10N08/10 Thermal Resistance, Junction to Case 3.12 1.67 "C/W RftJA Thermal Resistance, Junction to Ambient 30/80 80 °C/W PD Total Power Dissipation at Tc = 25°C 40 75 W IDM Pulsed Drain Current2 20 32 A R«JC Electrical Characteristics (Tc = 25°C unless otherwise noted) Symbol Characteristic Win Max Unit Test Conditions Off Characteristics V(BR)DSS loss IQSS Drain Source Breakdown Voltage1 IRF120/122/520/522/ MTP10N10 MTP10N08 80 IRF121/123/521/523 60 Zero Gate Voltage Drain Current Gate-Body Leakage Current IRF120-123 IRF520-523/MTP10N08/10 V VGS = 0 V, ID = 250 MA 250 UA VDS -Rated VDSS. VGS -0 V 1000 MA VDS = 0.8 x Rated VDSs, VGS = 0 V, T C =125°C nA VQS -± 20 v, VDS -o V 100 ±100 + 500
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