Datasheet BZX55 (Vishay) - 4

BZX55-Series
www.vishay.com Vishay Semiconductors
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) W 500 1.3 V = V /V (25 °C) Ztn Zt Z ient (K/ 400 1.2 b TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 300 1.1 4 x 10-4/K nction Am l l u 2 x 10-4/K J 200 1.0 0 - 2 x 10-4/K - 4 x 10-4/K Resist. 100 0.9 - Relative Voltage Change m. T = constant Ztn L V Ther 0 0.8 - - 60 0 60 120 180 240 A 0 5 10 15 20 thJ 95 9599 R T I - Lead Length (mm) 95 9611 j - Junction Temperature (°C) Fig. 1 - Thermal Resistance vs. Lead Length Fig. 4 - Typical Change of Working Voltage vs. Junction Temperature 600 ) 15 W 500 10 400 /K) re Coefficient -4 u 300 5 (10 er Dissipation (m Z w V 200 I = 5 mA Z of 0 - Temperat 100 Z V - Total Po TK tot P 0 - 5 0 40 80 120 160 200 0 10 20 30 40 50 95 9602 T - Ambient Temperature (°C) amb 95 9600 VZ - Z-Voltage (V) Fig. 2 - Total Power Dissipation vs. Ambient Temperature Fig. 5 - Temperature Coefficient of VZ vs. Z-Voltage 1000 200 ) V 150 100 V = 2 V R T = 25 °C j 100 I = 5 mA Z 10 oltage Change (m V 50 - Z - Diode Capacitance (pF) V DC 1 0 0 5 10 15 20 25 0 5 10 15 20 25 95 9598 V 95 9601 V Z - Z-Voltage (V) Z - Z-Voltage (V) Fig. 3 - Typical Change of Working Voltage under Operating Fig. 6 - Diode Capacitance vs. Z-Voltage Conditions at Tamb = 25 °C Rev. 1.8, 25-Nov-2021
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