Package TO-220 (Central Semiconductor) - 2

Material Composition Specification
TO-220 Case Device average mass
. .
1.89 g Fluctuation margin
. .
+/-10% Material Substance Component Material Substance CAS No. (%wt) (mg) (%wt) (mg) (ppm)
active device doped Si 0.3% 5.67 Si 7440-21-3 0.3% 5.67 3,006 bond wire aluminum 0.14% 2.55 Al 7429-90-5 0.14% 2.55 1,352 Cu 7440-50-8 66.79% 1,260 667,944 leadframe Cu alloy 66.89% 1261.86 Fe 7439-89-6 0.003% 0.06 32 P 7723-14-0 0.1% 1.8 954 Pb 7439-92-1 0.3% 5.74 3,043 high temperature die attach 0.33% 6.21 Sn 7440-31-5 0.02% 0.31 164 solder Ag 7440-22-4 0.01% 0.16 82 silica 7631-86-9 23.22% 438 232,190 epoxy resin Proprietary 7.32% 138 73,156 EMC 31.81% 600 Sb2O3 1309-64-4 0.64% 12 6,361 TBBA 79-94-7 0.64% 12 6,361 encapsulation* silica 7631-86-9 23.86% 450 238,552 epoxy resin Proprietary 4.93% 93 49,301 epoxy EMC GREEN 31.81% 600 polymer Proprietary 2.39% 45 23,855 Sb2O3 1309-64-4 0.54% 10.2 5,406 carbon black 1333-86-4 0.1% 1.8 954 Sn 7440-31-5 0.43% 8.08 4,283 tin/lead process 0.54% 10.1 plating** Pb 7439-92-1 0.11% 2.02 1,071 matte tin 0.54% 10.1 Sn 7440-31-5 0.54% 10.1 5,354 *EMC GREEN molding compound is Halogen-Free. **For Lead Free plating, add suffix “PB FREE” to part number. For Tin/Lead plating, add suffix “TIN/LEAD” to part number. No suffix designation allows for the supply of either lead-free or tin/lead plated product depending on availability. Disclaimer The information provided in this Material Composition data sheet is, to the best of our knowledge, correct. However, there is no guarantee to completeness or accuracy, as some information is derived from data sources outside the company. R4 (16-July 2018)
w w w. c e n t ra l s e m i . c o m