IRFD110 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS 101 Top 15 V 101 10 V 25 °C 8.0 V 7.0 V 6.0 V 175 °C 5.5 V 5.0 V Bottom 4.5 V 100 100 ain Current (A) ain Current (A) , Dr 4.5 V , Dr I D I D 20 µs Pulse Width 20 µs Pulse Width T = 25 °C 10-1 A V = 50 V DS 100 101 10-1 4 5 6 7 8 9 10 91127_01 VDS, Drain-to-Source Voltage (V) 91127_03 VGS, Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TA = 25 °CFig. 3 - Typical Transfer Characteristics V 3.0 GS I 101 = 5.6 A Top 15 V D V = 10 V 10 V GS 2.5 8.0 V 7.0 V 6.0 V 2.0 5.5 V ed) 5.0 V 100 Bottom 4.5 V 4.5 V 1.5 ain Current (A) maliz , Dr (Nor 1.0 I D ain-to-Source On Resistance , Dr 0.5 20 µs Pulse Width T = 175 °C A DS(on) 0.0 100 101 10-1 R - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 91127_02 VDS, Drain-to-Source Voltage (V) 91127_04 TJ, Junction Temperature (°C) Fig. 2 - Typical Output Characteristics, TA = 175 °CFig. 4 - Normalized On-Resistance vs. Temperature S21-0885-Rev. D, 30-Aug-2021 3 Document Number: 91127 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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