Datasheet IRFD110 (Vishay) - 4

IRFD110
www.vishay.com Vishay Siliconix 400 VGS = 0 V, f = 1 MHz C = C + C , C Shorted iss gs gd ds C = C 175 °C 320 rss gd C = C + C oss ds gd 240 100 C 25 °C iss ain Current (A) 160 Coss erse Dr Capacitance (pF) v 80 , Re 10-1 Crss I SD V = 0 V GS 0 100 101 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 91127_05 V V DS, Drain-to-Source Voltage (V) 91127_07 SD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 I = 5.6 A 102 D Operation in this area limited 5 by R V = 80 V DS(on) DS 16 V = 50 V 2 DS oltage (V) V V = 20 V 10 DS 12 10 µs 5 100 µs 2 8 ain Current (A) 1 ms 1 , Dr I D 10 ms , Gate-to-Source 4 5 T = 25
°
C GS A V For test circuit 2 T = 175
°
C J see figure 13 Single Pulse 0 0.1 2 5 2 5 2 5 2 5 0 2 4 6 8 10 0.1 1 10 102 103 91127_06 QG, Total Gate Charge (nC) 91127_08 VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
S21-0885-Rev. D, 30-Aug-2021
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