Datasheet AS6C6264 (Alliance Memory) - 3

AS6C6264 ® February 2007 Updated July 2017 8K X 8 BIT LOW POWER CMOS SRAM PIN CONFIGURATION
NC 1 28 Vcc A12 2 27 WE# A7 3 26 CE2 A6 4 25 A8 OE# 1 28 A10 AS6C A11 2 27 CE# A5 5 24 A9 A9 3 26 DQ7 A8 4 25 DQ6 A4 6 23 A11 CE2 5 24 DQ5 WE# 6 23 DQ4 A3 7 22 OE# Vcc 7 22 DQ3 8 AS6C6264 A2 8 6264 21 A10 NC 21 Vss A12 9 20 DQ2 A1 9 20 CE# A7 10 19 DQ1 A6 11 18 DQ0 A0 10 19 DQ7 A5 12 17 A0 A4 13 16 A1 DQ0 11 18 DQ6 A3 14 15 A2 DQ1 12 17 DQ5 sTSOP DQ2 13 16 DQ4 Vss 14 15 DQ3 PDIP/SOP
ABSOLUTE MAXIMUM RATINGS* PARAMETER SYMBOL RATING UNIT
Terminal Voltage with Respect to VSS VTERM -0.5 to 7.0 V 0 to 70(C grade) e p O t a r r e p m e T g n i t a e r u TA ºC -40 to 85(I grade) o t S rage e T p m erat r u e TSTG -65 to 150 ºC Pow r e D s i s a p i tion PD 1 W u O C D t r u C t u p r t n e IOUT 50 mA Soldering Temperature (under 10 sec) TSOLDER 260 ºC *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may af ect device reliability.
TRUTH TABLE MODE CE# CE2 OE# WE# I/O OPERATION SUPPLY CURRENT
H X X X High-Z ISB,ISB1 Standby X L X X High-Z ISB,ISB1 Output Disable L H H H High-Z ICC,ICC1 Read L H L H DOUT ICC,ICC1 Write L H X L DIN ICC,ICC1 Note: H = VIH, L = VIL, X = Don't care.
Page 2 of 12 July 2017, v2.0 Alliance Memory Inc