IRF640, SiHF640 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGSPARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W Maximum Junction-to-Case (Drain) RthJC - 1.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOLTESTCONDITIONSMIN.TYP.MAX.UNITStatic Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 200 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 11 A b - - 0.18 Forward Transconductance gfs VDS = 50 V, ID = 11 A b 6.7 - - S Dynamic Input Capacitance Ciss V - 1300 - GS = 0 V, Output Capacitance Coss VDS = 25 V, - 430 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 130 - Total Gate Charge Qg - - 70 I Gate-Source Charge Qgs V D = 18 A, VDS =160 V, GS = 10 V - - 13 nC see fig. 6 and 13 b Gate-Drain Charge Qgd - - 39 Turn-On Delay Time td(on) - 14 - Rise Time tr V - 51 - DD = 100 V, ID = 18 A, ns R Turn-Off Delay Time t g = 9.1 , RD = 5.4, see fig. 10 b d(off) - 45 - Fall Time tf - 36 - D Internal Drain Inductance L Between lead, D - 4.5 - 6 mm (0.25") from package and center of nH G Internal Source Inductance LS die contact - 7.5 - S Gate Input Resistance Rg f = 1 MHz, open drain 0.5 - 3.6 Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I D S - - 18 showing the integral reverse A G Pulsed Diode Forward Current a ISM p - n junction diode - - 72 S Body Diode Voltage VSD TJ = 25 °C, IS = 18 A, VGS = 0 V b - - 2.0 V Body Diode Reverse Recovery Time trr - 300 610 ns TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs b Body Diode Reverse Recovery Charge Qrr - 3.4 7.1 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S15-2667-Rev. C, 16-Nov-15 2 Document Number: 91036 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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