Datasheet STB75NF75, STP75NF75, STP75NF75FP (STMicroelectronics) - 5

link to page 9 link to page 9
STB75NF75 - STP75NF75 - STP75NF75FP Electrical characteristics Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time 25 ns V t DD= 37.5V, ID= 45A, r Rise time 100 ns R t G=4.7Ω, VGS=10V d(off) Turn-off delay time 66 ns Figure 15 on page 9 t Fall time 30 ns f
Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current 80 A I (1) SDM Source-drain current (pulsed) 320 A V (2) SD Forward on voltage ISD = 80A, VGS = 0 1.5 V I t SD = 80A, rr Reverse recovery time 132 ns di/dt = 100A/µs, Qrr Reverse recovery charge 660 nC VDD = 25V, TJ = 150°C I Reverse recovery current 10 A RRM Figure 17 on page 9 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/16 Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data 5 Packaging mechanical data 6 Revision history