Datasheet MBRS2040 (ON Semiconductor) - 2

link to page 2 link to page 2 link to page 2 link to page 3 link to page 2 link to page 3
MBRS2040LT3G, NRVBS2040LT3G, NRVBS2040LN MAXIMUM RATINGS Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 40 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IO A (At Rated VR, TC = 103°C) 2.0 Peak Repetitive Forward Current IFRM A (At Rated VR, Square Wave, 20 kHz, TC = 104°C) 4.0 Non−Repetitive Peak Surge Current IFSM A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 70 Storage Temperature Tstg, TC −55 to +150 °C Operating Junction Temperature TJ −55 to +125 °C Voltage Rate of Change dv/dt V/ms (Rated VR, TJ = 25°C) 10,000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Value Unit
Thermal Resistance — Junction−to−Lead (Note 1) RθJL 22.5 °C/W Thermal Resistance — Junction−to−Ambient (Note 2) RθJA 78 1. Minimum pad size (0.108 X 0.085 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3) VF
TJ = 25
°
C TJ = 125
°
C
Volts see Figure 2 (I 0.43 0.34 F = 2.0 A) (I 0.50 0.45 F = 4.0 A) Maximum Instantaneous Reverse Current (Note 3) IR
TJ = 25
°
C TJ = 100
°
C
mA see Figure 4 (VR = 40 V) 0.8 20 (VR = 20 V) 0.1 6.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.
www.onsemi.com 2