Datasheet BYV10-600P (NXP) - 3

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NXP Semiconductors BYV10-600P Ultrafast power diode Symbol Parameter Conditions Min Max Unit
IFSM non-repetitive peak forward tp = 10 ms; Tj(init) = 25 °C; sine-wave - 80 A current pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave - 88 A pulse; Fig. 4 Tstg storage temperature -65 175 °C Tj junction temperature - 175 °C aaa-008948 25 aaa-008977 20 δ = 1 Ptot a = 1.57 (W) Ptot (W) 20 1.9 0.5 15 2.2 2.8 15 0.2 4.0 0.1 10 10 5 5 0 0 0 5 10 15 0 2.5 5 7.5 10 IF(AV) (A) IF(AV) (A)
Fig. 1. Forward power dissipation as a function of Fig. 2. Forward power dissipation as a function of average forward current; square waveform; average forward current; sinusoidal waveform; maximum values maximum values
aaa-008978 15 aaa-008979 104 IF(AV) IFSM (A) 109 °C (A) 10 103 5 102 IF IFSM tp t Tj(init) = 25 °C max 0 10 -50 0 50 100 150 200 10-5 10-2 10-3 10-4 Tmb (°C) tp (s)
Fig. 3. Forward current as a function of mounting base Fig. 4. Non-repetitive peak forward current as a temperature; maximum values function of pulse width; sinusoidal waveform; maximum values
BYV10-600P All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 30 August 2013 3 / 9
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Legal information