Datasheet FDC5614P (Fairchild)

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DATA SHEET www.onsemi.com
MOSFET – P-Channel,
VDSS RDS(on) MAX ID MAX
POWERTRENCH), Logic 0.105 @ −10 V −60 V −3 A Level 0.135 @ −4.5 V 60 V S D FDC5614P D G
Description
D D This 60 V P−Channel MOSFET uses
onsemi
’s high voltage
TSOT23 6−Lead
POWERTRENCH process. It has been optimized for power
(SUPERSOT
t
−6)
management applications.
CASE 419BL Features
• −3 A, −60 V
MARKING DIAGRAM
♦ RDS(on) = 0.105 @ VGS = −10 V ♦ RDS(on) = 0.135 @ VGS = −4.5 V • Fast Switching Speed 564 MG • High Performance Trench Technology for Extremely Low RDS(on) G • This is a Pb−Free and Halide Free Device 1
Applications
564 = Specific Device Code • DC−DC Converters M = Date Code • G = Pb−Free Package Load Switch (Note: Microdot may be in either location) • Power Management
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PIN ASSIGNMENT Symbol Parameter Value Unit
VDSS Drain−Source Voltage −60 V 1 6 VGSS Gate−Source Voltage ±20 V I 5 D Drain Current 2 − Continuous (Note 1a) −3 A − Pulsed −20 3 4 PD Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction −55 to 150 °C Temperature Range
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
Device Package Shipping
† assumed, damage may occur and reliability may be affected. FDC5614P TSOT−23−6 3000 / (SUPERSOTt−6) Tape & Reel
THERMAL CHARACTERISTICS
(T (Pb−Free) A = 25°C unless otherwise noted)
Symbol Parameter Value Unit
†For information on tape and reel specifications, including part orientation and tape sizes, please RJA Thermal Resistance, 78 °C/W refer to our Tape and Reel Packaging Specifica- Junction−to−Ambient (Note 1a) tions Brochure, BRD8011/D. RJC Thermal Resistance, 30 °C/W Junction−to−Case (Note 1) © Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
July, 2022 − Rev. 4 FDC5614P/D