Datasheet MBRS320P, MBRS330P, MBRS340P (ON Semiconductor) - 2

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MBRS320P, MBRS330P, MBRS340P MAXIMUM RATINGS Rating Symbol MBRS320PT3G MBRS330PT3G MBRS340PT3G Unit
Peak Repetitive Reverse Voltage VRRM 20 30 40 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 3.0 @ TL = 110°C A 4.0 @ TL = 105°C Nonrepetitive Peak Surge Current IFSM A (Surge applied at rated load conditions halfwave, 80 single phase, 60 Hz) Operating Junction Temperature TJ − 65 to +150 °C ISO 7637 Pulse #1 Pulses (100 V, 10W) 5000 ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead RqJL 11 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1) VF V (iF = 3.0 A, TJ = 25°C) 0.50 Maximum Instantaneous Reverse Current (Note 1) iR mA (Rated dc Voltage, TJ = 25°C) 2.0 (Rated dc Voltage, TJ = 100°C) 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
10 10 ARD ARD W W TJ = 125°C TJ = 100°C TJ = 125°C TJ = 100°C 1 1 T T ANEOUS FOR J = 25°C ANEOUS FOR J = 25°C ANT CURRENT (AMPS) TJ = −40°C ANT CURRENT (AMPS) TJ = −40°C i, INST F i, INST F TJ = −65°C TJ = −65°C 0.1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2