Datasheet MBRS320P, MBRS330P, MBRS340P (ON Semiconductor) - 3

MBRS320P, MBRS330P, MBRS340P TYPICAL ELECTRICAL CHARACTERISTICS
(continued) 1.E−01 1.E−01 TJ = 125°C 1.E−02 TJ = 125°C 1.E−02 1.E−03 1.E−03 TJ = 100°C TJ = 100°C 1.E−04 1.E−04 TJ = 25°C 1.E−05 1.E−05 , REVERSE CURRENT (AMPS) TJ = 25°C I R 1.E−06 , MAXIMUM REVERSE CURRENT (AMPS) 1.E−06 0 5 10 15 20 25 30 35 40 I R 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
5 2 Freq = 20 kHz 4.5 dc 1.8 RqJL = 11°C/W SQUARE 4 ATION (W) 1.6 WAVE dc 3.5 IPK/IO = p 1.4 3 1.2 IPK/IO = 5 SQUARE WAVE 2.5 1 ARD CURRENT (AMPS) W 2 0.8 1.5 0.6 1 0.4 VERAGE POWER DISSIP 0.5 0.2 VERAGE FOR , A 0 0 , A 90 100 110 120 130 140 150 P FO I O 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating Figure 6. Forward Power Dissipation
700 TYPICAL CAPACITANCE AT 0 V = 658 pF TJ = 25°C 600 500 ANCE (pF) 400 ACIT 300 C, CAP 200 100 00 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (V)
Figure 7. Typical Capacitance www.onsemi.com 3