Datasheet 2N5401 (ON Semiconductor) - 4

2N5401 — Amplifier Transistor VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = -5V 100 10
-1 -10 -100 -1000 -10 IC = 10 IB VBE(sat)
-1 VCE(sat)
-0.1 -0.01
-1 -10 -100 IC[mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage 100 -1000 IE = 0
f = 1MHz Cob [pF], CAPACITANCE IC [mA], COLLECTOR CURRENT VCE = -5V -100 -10 -1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 10 1 0.1 -1.2 -1 VBE[V], BASE-EMITTER VOLTAGE -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT -1000 Figure 4. Output Capacitance 1000 VCE = -10V 100 10 1
-1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product © 1999 Fairchild Semiconductor Corporation
2N5401 Rev. 2.1 www.fairchildsemi.com
3