IRF840L, SiHF840L www.vishay.com Vishay Siliconix 8.0 6.0 101 ain Current (A) 4.0 150 °C ain Current (A) erse Dr v 25 °C , Dr I D 2.0 , Re I SD V = 0 V GS 100 0.0 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 91069_07 VSD, Source-to-Drain Voltage (V) 91069_09 TC, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward VoltageFig. 9 - Maximum Drain Current vs. Case Temperature RD 102 Operation in this area limited VDS 5 by RDS(on) VGS 10 µs D.U.T. 2 Rg + 10 - VDD 100 µs 5 10 V Pulse width ≤ 1 µs 2 1 ms ain Current (A) Duty factor ≤ 0.1 % 1 , Dr 10 ms I D Fig. 10a - Switching Time Test Circuit 5 T = 25 ° C C 2 T = 150 ° C J VDS Single Pulse 0.1 90 % 2 5 2 5 2 5 2 5 2 5 0.1 1 10 102 103 104 91069_08 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 10 % VGS t t t t d(on) r d(off) f Fig. 10b - Switching Time Waveforms 10 ) thJC 1 D = 0.5 0.2 0.1 0.1 PDM 0.05 0.02 Single Pulse 0.01 mal Response (Z (Thermal Response) t1 t 10-2 2 Ther Notes: 1. Duty Factor, D = t /t 1 2 2. Peak T = P x Z + T j DM thJC C 10-3 10-5 10-4 10-3 10-2 0.1 1 10 102 91069_11 t1, Rectangular Pulse Duration (S) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S21-0901-Rev. D, 30-Aug-2021 4 Document Number: 91069 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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