Datasheet STD4NK50Z-1, STD4NK50ZT4 (STMicroelectronics) - 3

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STD4NK50Z-1, STD4NK50ZT4 Electrical characteristics 2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit
V Drain-source breakdown (BR)DSS V voltage GS = 0 V, ID = 1 mA 500 V VGS = 0 V, VDS = 500 V 1 µA I Zero gate voltage drain DSS current VGS = 0 V, VDS = 500 V, 50 µA TC = 125 °C (1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V R Static drain-source on DS(on) V resistance GS = 10 V, ID = 1.5 A 2.2 2.7 Ω 1. Defined by design, not subject to production test.
Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance 310 VDS = 25 V, f = 1 MHz, Coss Output capacitance - 49 VGS = 0 V pF Crss Reverse transfer capacitance 10 Coss eq. (1) Equivalent output capacitance VGS = 0 V, VDS = 0 V to 400 V - 33 Qg Total gate charge VDD = 400 V, ID = 3 A, 12 Q V gs Gate-source charge GS = 0 to 10 V - 3 nC (see Figure 14. Test circuit for Qgd Gate-drain charge gate charge behavior) 7 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDSincreases from 0 to 80% VDSS.
Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 250 V, ID = 1.5 A, 10 t R r Rise time G = 4.7 Ω, VGS = 10 V 7 (see Figure 13. Test circuit for - ns td(off) Turn-off delay time 21 resistive load switching times and Figure 18. Switching time tf Fall time 11 waveform)
DS2913
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Rev 3 page 3/23
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 IPAK (TO-251) type A package information 4.2 IPAK (TO-251) type C package information 4.3 DPAK (TO-252) type A package information 4.4 DPAK (TO-252) type C package information 4.5 DPAK (TO-252) packing information 5 Ordering information Revision history