Datasheet NDS351AN (ON Semiconductor) - 5

NDS351AN Typical Characteristics
10 200 I =1.4A f = 1 MHz D V = 10V 180 DS 15V C V = 0 V ISS GS 8 160 20V 140 6 120 100 4 80 60
CAPACITANCE (pF)
COSS 2
, GATE-SOURCE VOLTAGE (V)
40
GSV
20 CRSS 0 0 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 5 SINGLE PULSE Rθ = 270°C/W JA T = 25°C 100µs 4 A 10 R LIMIT DS(ON) 1ms 3 10ms 1 100ms 1s 2 VGS = 10V DC
, DRAIN CURRENT (A)
SINGLE PULSE 0.1
I D
Rθ = 270oC/W JA 1 T = 25oC A
P(pk), PEAK TRANSIENT POWER (W)
0.01 0 0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1 D = 0.5 RθJA(t) = r(t) * RθJA R 0.2 θJA = 270oC/W 0.1 0.1 P(pk) 0.05 t 0.02 1 0.01 t2 0.01 TJ - TA = P * RθJA(t)
THERMAL RESISTANCE
Duty Cycle, D = t1 / t2 SINGLE PULSE
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
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