Datasheet BAS16 (Vishay) - 2

BAS16
www.vishay.com Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IF = 1 mA VF 0.715 V IF = 10 mA VF 855 mV Forward voltage IF = 50 mA VF 1 V IF = 150 mA VF 1.25 V VR = 75 V IR 1000 nA Reverse current VR = 75 V, Tj = 150 °C IR 50 μA VR = 25 V, Tj = 150 °C IR 30 μA Diode capacitance VR = 0, f = 1 MHz CD 4 pF I Reverse recovery time F = 10 mA to iR = 1 mA, VR = 6 V, RL = 100 Ω trr 6 ns
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) 1000 10000 VR = 20 V 100 1000 T = 100 °C j 10 Current (nA) 25 °C Current (mA) 100 1 Reverse Forward – 10 - 0.1 I R I F 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 150 175 200 14356 VF - Forward Voltage (V) 14357 Tj – Junction Temperature (°C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Reverse Current vs. Junction Temperature Rev. 1.9, 11-Jul-17
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