Datasheet NCS2005 (ON Semiconductor) - 3

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NCS2005 Table 5. ELECTRICAL CHARACTERISTICS AT 10 V SUPPLY
Unless otherwise noted, values are referenced to TA = 25°C, V+ = 10 V, V− = 0 V, VCM = V+/2, and RL > 1 MW to V+/2.
Boldface
limits apply from TA = −40°C to 125°C. (Notes 8, 9)
Parameter Test Conditions Symbol Min Typ Max Units SUPPLY CHARACTERISTICS
Quiescent Supply Current No load IS 1.30 1.5 mA
1.7
Power Supply Rejection Ratio VS = 2.7 V to 30 V PSRR 113 dB
70 INPUT CHARACTERISTICS
Input Offset Voltage VOS 0.2 6 mV
6
Input Offset Voltage Drift DV/DT 1 mV/°C Input Bias Current VCM = 0 V IIB 50 200 nA
200
VCM = 10 V 50 200
200
Input Offset Current VCM = 0 V IOS 2 70 nA
80
VCM = 10 V 2 70
80
Input Resistance RIN 95 MW Input Capacitance CIN 3 pF Common Mode Rejection Ratio VCM = V− to V+ CMRR 73 84 dB
OUTPUT CHARACTERISTICS
High−level output voltage IL = 10 mA VOH 9.65 9.80 V Low−Level Output Voltage IL = 10 mA VOL 176 300 mV Output Current Capability Sourcing current IOUT 12 mA Sinking current 20
DYNAMIC PERFORMANCE
Open Loop Voltage Gain RL = 10 kW AVOL 83 107 dB Gain−Bandwidth Product RL = 10 kW GBWP 8.5 MHz Gain Margin RL = 10 kW AM 5.5 dB Phase Margin RL = 10 kW yM 65 ° Slew Rate RL = 10 kW SR 2.8 V/ms Total Harmonic Distortion Plus Noise fIN = 1 kHz, AV = 2, RL = 2 kW THD+n 0.0015 %
NOISE PERFORMANCE
Voltage Noise Density f = 1 kHz eN 45 nV/√Hz 8. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 9. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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