Datasheet BSS100, BSS123 (Fairchild)

September 1996
BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features
These N-Channel logic level enhancement mode power BSS100: 0.22A, 100V. R = 6Ω @ V = 10V. DS(ON) GS field effect transistors are produced using Fairchild's BSS123: 0.17A, 100V. R = 6Ω @ V = 10V DS(ON) GS proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to High density cell design for extremely low R . DS(ON) minimize on-state resistance, provide superior switching performance. This product is particularly suited to low Voltage controlled small signal switch. voltage, low current applications, such as small servo Rugged and reliable. motor controls, power MOSFET gate drivers, and other switching applications. _______________________________________________________________________________
D G BSS100 BSS123 S Absolute Maximum Ratings
T = 25°C unless otherwise noted A
Symbol Parameter BSS100 BSS123 Units
V Drain-Source Voltage 100 V DSS VDGR Drain-Gate Voltage (R < 20KΩ) 100 V GS V Gate-Source Voltage - Continuous ± 14 V GSS - Non Repetitive (T < 50 µS) ± 20 P I Drain Current - Continuous 0.22 0.17 A D - Pulsed 0.9 0.68 P Total Power Dissipation @ T = 25
°
C 0.63 0.36 W D A T ,T Operating and Storage Temperature Range -55 to 150 °C J STG T Maximum Lead Temperature for Soldering 300 °C L Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
Rθ Thermal Resistacne, Junction-to-Ambient 200 350 °C/W JA © 1997 Fairchild Semiconductor Corporation BSS100 Rev. F1 / BSS123 Rev. F1 Document Outline Main Menu Power PSG MOSFET PSG Search fairchildsemi.com