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Datasheet BSS100, BSS123 (Fairchild) - 2

ПроизводительFairchild
ОписаниеN-Channel Logic Level Enhancement Mode Field Effect Transistor
Страниц / Страница10 / 2 — Electrical Characteristics. Symbol. Parameter. Conditions. Type. Min. …
Формат / Размер файлаPDF / 293 Кб
Язык документаанглийский

Electrical Characteristics. Symbol. Parameter. Conditions. Type. Min. Typ. Max. Units. OFF CHARACTERISTICS. ON CHARACTERISTICS

Electrical Characteristics Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS

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Small Signal Field-Effect Transistor, 0.22A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
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Electrical Characteristics
(T = 25°C unless otherwise noted) A
Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = 250 µA All 100 V DSS GS D I Zero Gate Voltage Drain Current V = 100 V, V = 0 V BSS100 15 µA DSS DS GS V = 100 V, V = 0 V BSS123 1 µA DS GS V = 100 V, V = 0 V T =125oC All 60 µA DS GS J V = 60 V, V = 0 V BSS100 10 nA DS GS V = 20 V, V = 0 V BSS123 10 nA DS GS I Gate - Body Leakage, Forward V = 20 V, V = 0 V BSS100 10 nA GSSF GS DS V = 20 V, V = 0 V BSS123 50 nA GS DS
ON CHARACTERISTICS
(Note 1) V Gate Threshold Voltage V = V , I = 1 mA All 0.8 1.4 2 V GS(th) DS GS D R Static Drain-Source On-Resistance V = 10 V, I = 0.22 A BSS100 2.8 6 Ω DS(ON) GS D V = 10 V, I = 0.17 A BSS123 2.8 6 GS D V = 4.5 V, I = 0.22 A BSS100 3.2 10 GS D V = 4.5 V, I = 0.17 A BSS123 3.2 10 GS D g Forward Transconductance V = 10 V, I = 0.22 A BSS100 0.08 0.4 S FS DS D V = 10 V, I = 0.17 A BSS123 0.08 0.4 DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = 25 V, V = 0 V, All 29 60 pF iss DS GS f = 1.0 MHz C Output Capacitance All 10 15 pF oss C Reverse Transfer Capacitance All 2 6 pF rss
SWITCHING CHARACTERISTICS
(Note 1) t Turn - On Delay Time V = 30 V, I = 0.28 A, All 8 ns D(on) DD D V = 10 V, R = 50 Ω t Turn - On Rise Time GS GEN All 8 ns r t Turn - Off Delay Time All 13 ns D(off) t Turn - Off Fall Time All 16 ns f Q Totall Gate Charge V = 10 V, I = 0.22 A, All 1.4 2 nC g DS D V = 10 V, GS Q Gate-Source Charge All 0.15 0.25 nC gs Q Gate-Drain Charge All 0.2 0.4 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Source Current BSS100 0.22 A S BSS123 0.17 I Maximum Pulse Source Current (Note 1) BSS100 0.9 A SM BSS123 0.68 V Drain-Source Diode Forward Voltage V = 0 V, I = 0.44 A BSS100 0.9 1.3 V SD GS S V = 0 V, I = 0.34 A BSS123 0.9 1.3 GS S Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. BSS100 Rev. F1 / BSS123 Rev. F1 Document Outline Main Menu Power PSG MOSFET PSG Search fairchildsemi.com
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