Datasheet 2N6667, 2N6668 (ON Semiconductor)

2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain −
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hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc
PNP SILICON
VCEO(sus) = 60 Vdc (Min) − 2N6667
DARLINGTON
= 80 Vdc (Min) − 2N6668 • Low Collector−Emitter Saturation Voltage −
POWER TRANSISTORS
VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc
10 A, 60−80 V, 65 W
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors • TO−220AB Compact Package • Complementary to 2N6387, 2N6388 • These Devices are Pb−Free and are RoHS Compliant* 4 COLLECTOR 1 BASE 2 3
TO−220 CASE 221A
≈ 8 k ≈ 120
STYLE 1 MARKING DIAGRAM
EMITTER
Figure 1. Darlington Schematic
2N666x AYWWG x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
ORDERING INFORMATION Device Package Shipping
2N6667G TO−220 50 Units/Rail (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please 2N6668G TO−220 50 Units/Rail download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (Pb−Free) © Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 8 2N6667/D