Datasheet IRLR024, IRLU024, SiHLR024, SiHLU024 (Vishay) - 2

IRLR024, IRLU024, SiHLR024, SiHLU024
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - - 110 Maximum junction-to-ambient °C/W (PCB mount) a RthJA - - 50 Maximum junction-to-case (drain) RthJC - - 3.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material)
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.068 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V Gate-source leakage IGSS VGS = ± 10 V - - ± 100 nA VDS = 60 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 48 V, VGS = 0 V, TJ = 125 °C - - 250 VGS = 5.0 V ID = 8.4 A b - - 0.10 Drain-source on-state resistance RDS(on) Ω VGS = 4.0 V ID = 7.0 A b - - 0.14 Forward transconductance gfs VDS = 25 V, ID = 8.4 A b 7.3 - - S
Dynamic
Input capacitance Ciss V - 870 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 360 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 53 - Total gate charge Qg - - 18 I Gate-source charge Qgs V D = 17 A, VDS = 48 V, GS = 5.0 V - - 4.5 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 12 Turn-on delay time td(on) - 11 - Rise time tr V - 110 - DD = 30 V, ID = 17 A, ns R Turn-off delay time t g = 9.0 Ω, RD = 1.7 Ω, see fig. 10 b d(off) - 23 - Fall time tf - 41 - Between lead, D Internal drain inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G Internal source inductance LS die contact - 7.5 - S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I MOSFET symbol S D - - 14 showing the integral reverse A G Pulsed diode forward current a ISM p - n junction diode - - 56 S Body diode voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 V b - - 1.5 V Body diode reverse recovery time trr - 130 260 ns TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 0.75 1.5 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0818-Rev. F, 02-Aug-2021
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