FMMT2222 SOT23 NPN SILICON PLANAR FMMT2222 FMMT2222A SWITCHING TRANSISTORS FMMT2222A ISSUE 3 FEBRUARY 1996 FEATURES ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). * Fast switching PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS. PARTMARKING DETAILS MIN. MAX. MIN. MAX. E C FMMT2222 1BZ FMMT2222A 1P Transition fT 250 300 MHz IC=20mA, VCE=20V Frequency f=100MHz FMMT2222R 2P FMMT2222AR 3P Output Capacitance C COMPLEMENTARY TYPES B obo 8 8 pF VCB=10V, IE=0, f=140KHz FMMT2222 FMMT2907 Input Capacitance Cibo 30 25 pF VEB=0.5V, IC=0 FMMT2222A FMMT2907A f=140KHz Delay Time t ABSOLUTE MAXIMUM RATINGS. d 10 10 ns VCC=30V, VBE(off)=0.5V I Rise Time t C=150mA, IB1=15mA r 25 25 ns PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT (See Delay Test Circuit) Col ector-Base Voltage V Storage Time t CBO 60 75 V s 225 225 ns VCC=30V, IC=150mA I Fall Time t B1= IB2=15mA f 60 60 ns Collector-Emitter Voltage VCEO 30 40 V (See Storage Test Circuit) Emitter-Base Voltage VEBO 5 6 V Continuous Col ector Current IC 600 mA DELAY AND RISE TEST CIRCUIT Power Dissipation at Tamb=25°C Ptot 330 mW +30V Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C Generator rise time <2ns ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS. Pulse width (t1)<200ns 200Ω MIN. MAX. MIN. MAX. Duty cycle = 2% Collector-Base V(BR)CBO 60 75 V I Breakdown Voltage C=10µA, IE=0 619Ω 9.9V Collector-Emitter V(BR)CEO 30 40 V IC=10mA, IB=0 Breakdown Voltage Scope: Emitter-Base V(BR)EBO 5 6 V I 0 Rin > 100 kΩ Breakdown Voltage E=10µA, IC=0 0.5V Cin < 12 pF Collector Cut-Off ICBO 10 nA VCB=50V, IE=0 Current 10 µA V Rise Time < 5 ns CB=60V, IE=0 10 nA VCB=50V, IE=0, Tamb=150°C 10 µA VCB=60V, IE=0, Tamb=150°C STORAGE TIME AND FALL TIME TEST CIRCUIT Emitter Cut-Off IEBO 10 10 nA VEB=3V, IC=0 Current +30V Collector-Emitter ICEX 10 10 nA VCE=60V, VEB(off) =3V =100µs Cut-Off Current <5ns Collector-Emitter V 200Ω CE(sat) 0.3 0.3 V IC=150mA, IB=15mA* Saturation Voltage 1.0 1.0 V I +16.2 V C=500mA, IB=50mA* Base-Emitter VBE(sat) 0.6 2.0 0.6 1.2 V IC=150mA, IB=15mA* Saturation Voltage 2.6 2.0 V IC=500mA, IB=50mA* 0 Static Forward h 1KΩ FE 35 35 IC=0.1mA, VCE=10V* Current Transfer 50 50 IC=1mA, VCE=10V Scope: Ratio 75 75 IC=10mA, VCE=10V* Rin > 100 kΩ 35 35 IC=10mA, VCE=10V, Tamb=-55°C 1N916 Cin < 12 pF 100 300 100 300 IC=150mA, VCE=10V* -13.8 V Rise Time < 5 ns 50 50 IC=150mA, VCE=1V* -3V 30 40 IC=500mA, VCE=10V* =500µs *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device Duty cycle = 2%
