Datasheet NDS331N (ON Semiconductor) - 3

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NDS331N ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise noted.
Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 A 20 − − V IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V − − 1 A VDS = 16 V, VGS = 0 V, TJ = 125°C − − 10 IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V − − 100 nA IGSSR Gate–Body Leakage, Reverse VGS = −8 V, VDS = 0 V − − −100 nA
ON CHARACTERISTICS
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 0.5 0.7 1 V VDS = VGS, ID = 250 A, TJ = 125°C 0.3 0.53 0.8 RDS(on) Static Drain–Source On–Resistance VGS = 2.7 V, ID = 1.3 A − 0.15 0.21 VGS = 2.7 V, ID = 1.3 A, TJ = 125°C − 0.24 0.4 VGS = 4.5 V, ID = 1.5 A − 0.11 0.16 ID(on) On–State Drain Current VGS = 2.7 V, VDS = 5 V 3 − − A VGS = 4.5 V, VDS = 5 V 4 − − gFS Forward Transconductance VDS = 5 V, ID = 1.3 A − 3.5 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz − 162 − pF Coss Output Capacitance − 85 − pF Crss Reverse Transfer Capacitance − 28 − pF
SWITCHING CHARACTERISTICS
(Note 2) tD(on) Turn–On Delay Time VDD = 5 V, ID = 1 A, VGS = 5 V, − 5 20 ns RGEN = 6 tr Turn–On Rise Time − 25 40 ns tD(off) Turn–Off Delay Time − 10 20 ns tf Turn–Off Fall Time − 5 20 ns Qg Total Gate Charge VDS = 5 V, ID = 1.3 A, VGS = 4.5 V − 3.5 5 nC Qgs Gate–Source Charge − 0.3 − nC Qgd Gate–Drain Charge − 1 − nC
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain–Source Diode Forward Current − − 0.42 A ISM Maximum Pulsed Drain−Source Diode Forward Current − − 10 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) − 0.8 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
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