Datasheet TN0200K (Vishay)

New Product TN0200K
Vishay Siliconix
N-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY V
• TrenchFET® Power MOSFET
DS (V) rDS(on) (
Ω
) ID (A)
• ESD Protected: 4000 V 0.4 at VGS = 4.5 V 0.73
RoHS
20
COMPLIANT
0.5 at V
APPLICATIONS
GS = 2.5 V 0.65 • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers • Battery Operated Systems, DC/DC Converters • Solid-State Relays • Load/Power Switching-Cell Phones, Pagers
TO-236
D
(SOT-23)
G 1
Marking Code:
K2ywl 100 Ω G 3 D K2 = Part Number Code for TN0200K y = Year Code S 2 w = Week Code l = Lot Traceability Top View
Ordering Information:
TN0200K-T1-E3 (Lead (Pb)-free) S
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 TA = 25 °C 0.73 Continuous Drain Current (T I J = 150 °C)b D TA = 70 °C 0.58 A Pulsed Drain Currenta IDM 4 Continuous Source Current (Diode Conduction)b IS 0.3 TA = 25 °C 0.35 Power Dissipationb PD W TA = 70 °C 0.22 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit
Maximum Junction-to-Ambientb RthJA 357 °C/W Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t ≤ 10 sec. Document Number: 72678 www.vishay.com S-71198–Rev. B, 18-Jun-07 1 Document Outline Datasheet Disclaimer