Datasheet TN0200K (Vishay) - 2

New Product TN0200K
Vishay Siliconix
SPECIFICATIONS
TA = 25 °C, unless otherwise noted
Limits Parameter Symbol Test Conditions Min Typ Max Unit Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 µA 20 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 50 µA 0.45 0.6 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 5 VDS = 20 V, VGS = 0 V 0.1 µA Zero Gate Voltage Drain Current IDSS TJ = 55 °C 10 V ≥ DS 5 V, VGS = 4.5 V 2.5 On-State Drain Currenta ID(on) A V ≥ DS 5 V, VGS = 2.5 V 1.5 VGS = 4.5 V, ID = 0.6 A 0.2 0.4 Drain-Source On-Resistancea rDS(on) Ω VGS = 2.5 V, ID = 0.6 A 0.25 0.5 Forward Transconductancea gfs VDS = 5 V, ID = 0.6 A 2.2 S Diode Forward Voltagea VSD IS = 0.3 A, VGS = 0 V 0.8 1.2 V
Dynamicb
Total Gate Charge Qg 1400 2000 VDS = 10 V, VGS = 4.5 V Gate-Source Charge Qgs 190 pC ID = 0.6 A Gate-Drain Charge Qgd 300 Gate Resistance Rg 105 Ω Turn-On Delay Time td(on) 17 25 VDD = 10 V, RL = 16 Ω Rise Time tr 20 30 ID ≅ 0.6 A, VGEN = 4.5 V ns Turn-Off Delay Time td(off) R 55 85 g = 6 Ω Fall TIme tf 30 45 Notes: a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 4.0 4 T V J = - 55 °C GS = 5 thru 2.5 V 3.2 3 2 V 25 °C 2.4 2 125 °C ain Current (A) 1.6 ain Current (A) – Dr 1.5 V – Dr D D I 1 I 0.8 1 V 0.0 0 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
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