IRFP240 www.vishay.com Vishay Siliconix Power MOSFET D FEATURES • Dynamic dV/dt rating TO-247AC • Repetitive avalanche rated Available • Isolated central mounting hole Available • Fast switching G • Ease of paralleling S • Simple drive requirements D • Material categorization: for definitions of compliance G S please see www.vishay.com/doc?99912 N-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. PRODUCT SUMMARY Please see the information / tables in this datasheet for details VDS (V) 200 R DESCRIPTION DS(on) (Ω) VGS = 10 V 0.18 Third generation Power MOSFETs from Vishay provide the Qg (max.) (nC) 70 designer with the best combination of fast switching, Qgs (nC) 13 ruggedized device design, low on-resistance and Qgd (nC) 39 cost-effectiveness. Configuration Single The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package TO-247AC Lead (Pb)-free IRFP240PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOLLIMITUNIT Drain-source voltage VDS 200 V Gate-source voltage VGS ± 20 TC = 25 °C 20 Continuous drain current VGS at 10 V ID TC = 100 °C 12 A Pulsed drain current a IDM 80 Linear derating factor 1.2 W/°C Single pulse avalanche energy b EAS 510 mJ Repetitive avalanche currenta IAR 20 A Repetitive avalanche energya EAR 15 mJ Maximum power dissipation TC = 25 °C PD 150 W Peak diode recovery dV/dt c dV/dt 5.0 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d for 10 s 300d Mounting torque 10 lbf · in 6-32 or M3 screw 1.1 N · m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 1.9 mH, Rg = 25 Ω, IAS = 20 A (see fig. 12) c. ISD ≤ 18 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S22-0046, Rev. C, 24-Jan-2021 1 Document Number: 91210 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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