Datasheet H11F1M, H11F2M, H11F3M (ON Semiconductor)

link to page 6
DATA SHEET www.onsemi.com
Photo FET Optocouplers H11F1M, H11F2M, H11F3M
PDIP6 8.51x6.35, 2.54P
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CASE 646BX
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General Description
The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon
PDIP6 8.51x6.35, 2.54P
6 photo−detector. The detector is electrically isolated from the input
CASE 646BY
and performs like an ideal isolated FET designed for distortion−free 1 control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in−line packages.
PDIP6 8.51x6.35, 2.54P Features
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CASE 646BZ
• As a Remote Variable Resistor: 1 ♦ ≤ 100 W to ≥ 300 MW ♦ ≤15 pF Shunt Capacitance
MARKING DIAGRAM
♦ ≥100 GW I/O Isolation Resistance • As an Analog Switch: ♦ Extremely Low Offset Voltage ♦ 60 V ON pk−pk Signal Capability ♦ No Charge Injection or Latch−Up H11F1 VXYYQ ♦ UL Recognized (File #E90700) • These are Pb−Free Devices
Application
H11F1 = Specific Device Code • As a Remote Variable Resistor: V = VDE Mark (Only appears on parts ordered ♦ Isolated Variable Attenuator with VDE option − See order entry table) ♦ Automatic Gain Control X = One−Digit Year Code, e.g., “7” YY = Two Digit Work Week Ranging ♦ Active Filter Fine Tuning/Band Switching from “01” to “53” • As an Analog Switch: Q = Assembly Package Code ♦ Isolated Sample and Hold Circuit ♦ Multiplexed, Optically Isolated A/D Conversion
SCHEMATIC
OUTPUT ANODE 1 6 TERM. CATHODE 2 5 OUTPUT 3 4 TERM.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2007
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Publication Order Number:
September, 2022 − Rev. 3 H11F3M/D