Datasheet MBT3906DW1 (ON Semiconductor) - 2

link to page 2 link to page 2
MBT3906DW1 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2) V(BR)CEO −40 − Vdc Collector−Base Breakdown Voltage V(BR)CBO −40 − Vdc Emitter−Base Breakdown Voltage V(BR)EBO −5.0 − Vdc Base Cutoff Current IBL − −50 nAdc Collector Cutoff Current ICEX − −50 nAdc
ON CHARACTERISTICS
(Note 2) DC Current Gain hFE − (IC = −0.1 mAdc, VCE = −1.0 Vdc) 60 − (IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 − (IC = −10 mAdc, VCE = −1.0 Vdc) 100 300 (IC = −50 mAdc, VCE = −1.0 Vdc) 60 − (IC = −100 mAdc, VCE = −1.0 Vdc) 30 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = −10 mAdc, IB = −1.0 mAdc) − −0.25 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.4 Base −Emitter Saturation Voltage VBE(sat) Vdc (IC = −10 mAdc, IB = −1.0 mAdc) −0.65 −0.85 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.95
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT 250 − MHz Output Capacitance Cobo − 4.5 pF Input Capacitance Cibo − 10.0 pF Input Impedance hie kW (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 2.0 12 Voltage Feedback Ratio hre X 10−4 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 0.1 10 Small−Signal Current Gain hfe − (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 100 400 Output Admittance hoe mmhos (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 3.0 60 Noise Figure NF dB (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz) − 4.0
SWITCHING CHARACTERISTICS
Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc) td − 35 ns Rise Time (IC = −10 mAdc, IB1 = −1.0 mAdc) tr − 35 Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc) ts − 225 ns Fall Time (IB1 = IB2 = −1.0 mAdc) tf − 75 2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
www.onsemi.com 2